Use of PicoFemto®In situ sample rod published research results continue to update, the future small series will continue to update product application cases. Teachers who missed the previous report can also click "previous articles" on the front page of the public number to read. You are also welcome to pay attention to the public number. Here are the cutting-edge information in the field of electron microscopy, special experimental schemes and high-level research results. Come and open your brains with your friends.

This issue brings an article PicoFemto the application of in-situ sample rods in the research and development of a new generation of semiconductor devices. Field effect transistors have a wide range of applications in the semiconductor industry. Among them, a field effect transistor in which a gate is made of a piezoelectric material (zinc oxide or the like) has gained widespread attention in recent years. In this paper, a STM-TEM in situ sample rod is used to carry a single zinc oxide nanowire, and it is manipulated, measured and observed in situ in TEM. Studies have shown that when we use STM probes to apply 2.63% stress to ZnO nanowires, the conductivity of the material will drop by 2 orders of magnitude. Combined with TEM observations, we found that this change in conductivity has nothing to do with the Shokli barrier at the contact point, but is derived from the loss of carriers caused by the transverse piezoelectric potential of the ZnO nanowires. Relevant research was jointly completed by NIMS of Japan, Institute of Physics of Chinese Academy of Sciences and Quantum Matter Cooperative Innovation Center. The results were published in Nano Energy (2015)13, 233-239.

The PicoFemto in-situ sample rod of Zeryou Technology stably and accurately realized the tasks of carrying samples, electrical measurement and applying stress in this study.

One end of the zinc oxide nanowire is fixed on the gold needle, and the other end is stressed by tungsten.

Theoretical model support for experimental results

Application device model