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china Nano Displacement Stage

china Nano Displacement Stage

Nano Displacement Stage RF-8382A, driven by piezoelectric ceramics, has the advantages of accurate positioning, good position retention, self-locking, and the ability to rotate infinitely through 360°.

22

2026

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04

Nature Materials | ZEPTOOLS In-Situ TEM Reveals Electric-Field-Induced Phase Transition-Driven Nitride-Based Non-Volatile Memory

Nature Materials | ZEPTOOLS In-Situ TEM Reveals Electric-Field-Induced Phase Transition-Driven Nitride-Based Non-Volatile Memory

With the widespread adoption of the Internet of Things, artificial intelligence, and big data analytics technologies, modern information systems are experiencing an exponential increase in demand for data storage capacity and processing speed. To address the "memory wall" problem caused by the data transfer bottleneck between the central processing unit and volatile main memory, the industry has proposed innovative architectures such as near-memory computing and in-memory computing, which impose more stringent requirements for high speed and low power consumption in non-volatile memory technologies. Due to the significant latency gap between existing volatile main memory and traditional non-volatile storage media, not only is system response speed limited, but considerable energy waste also occurs. Therefore, developing a novel memory solution that achieves nanosecond-scale read/write speeds, exhibits excellent reliability, and is deeply compatible with complementary metal-oxide-semiconductor processes has become a research focus in the semiconductor field.

21

2026

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04

Advanced Materials | ZEPTOOLS In-Situ TEM Helps Reveal Unsaturated Molybdenum Disulfide-Induced Ultrafast Sodium Ion Kinetics

Advanced Materials | ZEPTOOLS In-Situ TEM Helps Reveal Unsaturated Molybdenum Disulfide-Induced Ultrafast Sodium Ion Kinetics

Room-temperature sodium-sulfur batteries, with their low cost, abundant resource reserves, and extremely high theoretical energy density, are widely regarded as a key technological solution for future large-scale energy storage systems. In current research, to overcome the polysulfide shuttle effect, researchers often employ porous carbon frameworks for physical confinement or use polar host materials to introduce chemical interactions, thereby enhancing the affinity for polysulfides and promoting their catalytic conversion. However, these strategies still fundamentally rely on the dissolution and re-precipitation conversion pathway involving soluble long-chain polysulfides. Due to the relatively weak interaction between carbon hosts and active materials, the shuttle effect is often not fully suppressed, and sluggish redox kinetics still limit the rate performance of the battery, leading to rapid capacity decay during cycling.

20

2026

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04

Exploring the Benefits of Desktop Scanning Electron Microscopes in Education

Exploring the Benefits of Desktop Scanning Electron Microscopes in Education

Exploring the Benefits of Desktop Scanning Electron Microscopes in Education Table of Contents Introduction to Desktop Scanning Electron Microscopes (DSEM) A Brief History of Electron Microscopy The Role of Desktop Scanning Electron Microscopes in Education Advantages of Using DSEM in Educational Settings Enhanced Learning Experiences Encouraging Hands-On Experimentation

19

2026

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04

Advanced Materials | ZEPTOOLS In-Situ TEM Helps Break Through Ultra-Low Leakage Current Performance Bottleneck of 3D Memory Selectors

Advanced Materials | ZEPTOOLS In-Situ TEM Helps Break Through Ultra-Low Leakage Current Performance Bottleneck of 3D Memory Selectors

Increasing the integration density of memory chips is critical for high-capacity storage and parallel computing, which demands that selector components in 3D stacked cross-point architectures possess ultra-low leakage current and appropriate threshold voltage. Currently, 3D phase-change memory primarily uses ovonic threshold switching (OTS) selectors to control the on/off state of memory cells, and the access performance of these selectors directly affects chip area efficiency and cost. An ideal selector should achieve picoamp-level sub-threshold leakage current at half-bias voltage while exhibiting extremely high switching nonlinearity, with the threshold voltage maintained between 1.8 and 2.5 volts to be compatible with low-voltage logic devices in advanced technology nodes. However, existing material systems and structural designs often struggle to simultaneously meet these stringent parameter requirements, constraining the development of larger-scale memory arrays.

16

2026

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04

Exploring Electron Beam Lithography: A Key Technology in Electronics Manufacturing

Exploring Electron Beam Lithography: A Key Technology in Electronics Manufacturing

Electron beam lithography (EBL) is an advanced technique widely utilized in the field of electronics manufacturing, particularly for the production of intricate patterns on semiconductor devices, microelectromechanical systems (MEMS), and nanostructures. Unlike traditional photolithography, which relies on ultraviolet light to transfer patterns onto substrates, EBL employs a focused beam of electr

16

2026

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04

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