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Nature Communications | ZEPTOOLS ZEM Series Desktop Scanning Electron Microscope Aids Development of Highly Stable Fiber-Integrated Graphene Ultrafast Electron Source

Nature Communications | ZEPTOOLS ZEM Series Desktop Scanning Electron Microscope Aids Development of Highly Stable Fiber-Integrated Graphene Ultrafast Electron Source

In the field of vacuum electronics, stable and durable ultrafast electron sources are critical for achieving high-precision time-resolved imaging and spectroscopic analysis. Traditional electron sources typically rely on metals such as gold and tungsten, or low-dimensional materials such as carbon nanotubes, as photocathodes, generating electron pulses through mechanisms such as multiphoton emission, the photoelectric effect, or optical field emission. However, these methods have significant limitations. On the one hand, multiphoton emission and optical field emission require ultra-high-power lasers or deep ultraviolet pulse excitation, leading not only to cathode material damage and mechanical vibration but also demanding extreme vacuum conditions. On the other hand, existing electron sources generally suffer from time-dependent beam current instability, requiring recalibration every 4–6 hours, which severely constrains equipment operational efficiency and data reliability.

15

2025

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07

Nature Electronics | ZEPTOOLS In-Situ TEM Facilitates Microscopic Mechanism Study of In-Sensor Computing Devices

Nature Electronics | ZEPTOOLS In-Situ TEM Facilitates Microscopic Mechanism Study of In-Sensor Computing Devices

The rise of intelligent edge applications, such as micro-robots and wearable devices, has imposed stringent requirements for low power consumption in visual perception systems. Although the traditional complementary metal-oxide-semiconductor (CMOS) architecture is technologically mature, the computational and memory overheads associated with analog-to-digital conversion and algorithm execution often exceed the extremely low power budgets of edge devices. In-sensor computing technology integrates optical sensing and analog computation within a single chip, reducing data redundancy and significantly lowering energy consumption from the source, making it a key pathway to address the above bottleneck. Currently, researchers often attempt to use electrostatic doping or two-dimensional materials to encode tunable photoresponsivity weights, thereby performing the matrix-vector multiplication operations at the core of neural networks.

09

2026

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05

ZEPTOOLS DMD Maskless Aligner | Fabrication of High-Performance Two-Dimensional Palladium Diselenide Long-Wave Infrared Focal Plane Arrays

ZEPTOOLS DMD Maskless Aligner | Fabrication of High-Performance Two-Dimensional Palladium Diselenide Long-Wave Infrared Focal Plane Arrays

Long-wave infrared detection technology holds core application value in military, medical, and industrial security fields. Its detection band aligns well with the thermal radiation peak of room-temperature objects, making it key to achieving uncooled thermal imaging. Currently, vanadium oxide and amorphous silicon, with their excellent temperature coefficient of resistance and tunable resistivity, have become the mainstream thermosensitive materials for uncooled infrared focal plane arrays. However, the research community continues to seek higher-performance alternatives. Palladium diselenide (PdSe₂), as an emerging two-dimensional semiconductor with layer‑tunable bandgap, excellent chemical stability, and good compatibility with low‑power CMOS back‑end‑of‑line processes, is regarded as an ideal platform for developing next‑generation high‑performance, low‑cost infrared detectors.

29

2026

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04

Nature Materials | ZEPTOOLS In-Situ TEM Reveals Electric-Field-Induced Phase Transition-Driven Nitride-Based Non-Volatile Memory

Nature Materials | ZEPTOOLS In-Situ TEM Reveals Electric-Field-Induced Phase Transition-Driven Nitride-Based Non-Volatile Memory

With the widespread adoption of the Internet of Things, artificial intelligence, and big data analytics technologies, modern information systems are experiencing an exponential increase in demand for data storage capacity and processing speed. To address the "memory wall" problem caused by the data transfer bottleneck between the central processing unit and volatile main memory, the industry has proposed innovative architectures such as near-memory computing and in-memory computing, which impose more stringent requirements for high speed and low power consumption in non-volatile memory technologies. Due to the significant latency gap between existing volatile main memory and traditional non-volatile storage media, not only is system response speed limited, but considerable energy waste also occurs. Therefore, developing a novel memory solution that achieves nanosecond-scale read/write speeds, exhibits excellent reliability, and is deeply compatible with complementary metal-oxide-semiconductor processes has become a research focus in the semiconductor field.

21

2026

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04

Advanced Materials | ZEPTOOLS In-Situ TEM Helps Reveal Unsaturated Molybdenum Disulfide-Induced Ultrafast Sodium Ion Kinetics

Advanced Materials | ZEPTOOLS In-Situ TEM Helps Reveal Unsaturated Molybdenum Disulfide-Induced Ultrafast Sodium Ion Kinetics

Room-temperature sodium-sulfur batteries, with their low cost, abundant resource reserves, and extremely high theoretical energy density, are widely regarded as a key technological solution for future large-scale energy storage systems. In current research, to overcome the polysulfide shuttle effect, researchers often employ porous carbon frameworks for physical confinement or use polar host materials to introduce chemical interactions, thereby enhancing the affinity for polysulfides and promoting their catalytic conversion. However, these strategies still fundamentally rely on the dissolution and re-precipitation conversion pathway involving soluble long-chain polysulfides. Due to the relatively weak interaction between carbon hosts and active materials, the shuttle effect is often not fully suppressed, and sluggish redox kinetics still limit the rate performance of the battery, leading to rapid capacity decay during cycling.

20

2026

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04

Advanced Materials | ZEPTOOLS In-Situ TEM Helps Break Through Ultra-Low Leakage Current Performance Bottleneck of 3D Memory Selectors

Advanced Materials | ZEPTOOLS In-Situ TEM Helps Break Through Ultra-Low Leakage Current Performance Bottleneck of 3D Memory Selectors

Increasing the integration density of memory chips is critical for high-capacity storage and parallel computing, which demands that selector components in 3D stacked cross-point architectures possess ultra-low leakage current and appropriate threshold voltage. Currently, 3D phase-change memory primarily uses ovonic threshold switching (OTS) selectors to control the on/off state of memory cells, and the access performance of these selectors directly affects chip area efficiency and cost. An ideal selector should achieve picoamp-level sub-threshold leakage current at half-bias voltage while exhibiting extremely high switching nonlinearity, with the threshold voltage maintained between 1.8 and 2.5 volts to be compatible with low-voltage logic devices in advanced technology nodes. However, existing material systems and structural designs often struggle to simultaneously meet these stringent parameter requirements, constraining the development of larger-scale memory arrays.

16

2026

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04

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