Product classification
Plasma Modification Systems
Classification:
Product Description
The plasma modification system, utilizing ZEPTOOLS' own three-temperature tube furnace, has epitaxially grown large-size, high-quality single-layer molybdenum disulfide films on sapphire substrates by oxygen-assisted chemical vapor deposition technology. The introduction of oxygen during the growth process not only effectively prevents the poisoning of molybdenum trioxide source and reduces the nucleation density, but also reduces the sulfur vacancy density, thus realizing the growth of large-size single crystal monolayer molybdenum disulfide.
Using the plasma modification system, the epitaxial growth of two-inch wafer-level high-quality monolayer molybdenum disulfide has been realized under the premise of self-limiting growth (100% coverage, uniform film formation), and zero contamination of wafer-level films and substrate lossless transfer has been achieved through improved transfer equipment. The monolayer of molybdenum disulfide film covers the entire sapphire substrate uniformly with no gaps and no overlapping layers. The film consists of 1-micron grains spliced together with a relative orientation of 60 º. The resulting film contains only 60 º grains. The resulting film contains only 60 º grain boundaries.
- Plasma Modification System Product Advantages
△ Effective avoidance of poisoning from solid state sources;
△ Good uniformity of film formation;
△ Large film forming area;
△ Fast and controllable growth rate.

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